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PBSS306NX,115

  • PBSS306NX,115
  • PBSS306NX,115

PBSS306NX,115

PBSS306NX,115

Nexperia USA Inc.

PBSS306NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS306NX,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 110MHz
Base Part Number PBSS306N
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 245mV @ 225mA, 4.5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 110MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.603465 $0.603465
10 $0.569307 $5.69307
100 $0.537082 $53.7082
500 $0.506681 $253.3405
1000 $0.478001 $478.001
PBSS306NX,115 Product Details

PBSS306NX,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 245mV @ 225mA, 4.5A.The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 110MHz.The breakdown input voltage is 100V volts.A maximum collector current of 4.5A volts is possible.

PBSS306NX,115 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 245mV @ 225mA, 4.5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz

PBSS306NX,115 Applications


There are a lot of Nexperia USA Inc. PBSS306NX,115 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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