PBSS4440D,115 Overview

This device has a DC current gain of 250 @ 2A 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

PBSS4440D,115 Features

the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

PBSS4440D,115 Applications

There are a lot of Nexperia USA Inc. PBSS4440D,115 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver