2SA1908 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SA1908 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
75W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
75W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 3A 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
20MHz
Frequency - Transition
20MHz
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.185200
$4.1852
10
$3.948302
$39.48302
100
$3.724813
$372.4813
500
$3.513975
$1756.9875
1000
$3.315070
$3315.07
2SA1908 Product Details
2SA1908 Overview
In this device, the DC current gain is 50 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 300mA, 3A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 20MHz.Collector current can be as low as 8A volts at its maximum.
2SA1908 Features
the DC current gain for this device is 50 @ 3A 4V the vce saturation(Max) is 500mV @ 300mA, 3A a transition frequency of 20MHz
2SA1908 Applications
There are a lot of Sanken 2SA1908 applications of single BJT transistors.