BCX52H6327XTSA1 Overview

In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A maximum collector current of 1A volts can be achieved.

BCX52H6327XTSA1 Features

the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCX52H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX52H6327XTSA1 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting