DMG1024UV-7

new-10%

Manufacturer part number:DMG1024UV-7

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 20V 1.38A Automotive 6-Pin SOT-563 T/R

Case Package:SOT-23

Datasheet:DMG1024UV-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	3.005049mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	10Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Max Power Dissipation	530mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG1024UV
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	530mW
Turn On Delay Time	5.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Rise Time	7.4ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	12.3 ns
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	1.38A
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	1.39A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free