FDS4559

new-10%

Manufacturer part number:FDS4559

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC

Case Package:SOT-23

Datasheet:FDS4559 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	55MOhm
Subcategory	Other Transistors
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	4.5A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Power - Max	1W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A 3.5A
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	10ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	12 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	2.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Avalanche Energy Rating (Eas)	90 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	175°C
FET Feature	Logic Level Gate
Nominal Vgs	2.2 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free