DMN2500UFB4-7

new-10%

Manufacturer part number:DMN2500UFB4-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 0.81A 3DFN

Case Package:SOT-23

Datasheet:DMN2500UFB4-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	460mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C	810mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Rise Time	7.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	12.3 ns
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	810mA
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	20V
Height	350μm
Length	1.05mm
Width	650μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free