DMN31D5UFZ-7B

new-10%

Manufacturer part number:DMN31D5UFZ-7B

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V .22A X2-DFN0606-

Case Package:SOT-23

Datasheet:DMN31D5UFZ-7B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	393mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	22.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C	220mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
Rise Time	2ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6.9 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	220mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.22A
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant