DN0150ALP4-7B Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A constant collector voltage of 100mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.60MHz is present in the transition frequency.This device can take an input voltage of 50V volts before it breaks down.The maximum collector current is 100mA volts.

DN0150ALP4-7B Features

the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

DN0150ALP4-7B Applications

There are a lot of Diodes Incorporated DN0150ALP4-7B applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver