SMBTA 92 E6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
SMBTA 92 E6433 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Reach Compliance Code
unknown
Base Part Number
MBTA92
Configuration
Single
Power - Max
360mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
Power Dissipation-Max (Abs)
0.36W
RoHS Status
RoHS Compliant
SMBTA 92 E6433 Product Details
SMBTA 92 E6433 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.A transition frequency of 50MHz is present in the part.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
SMBTA 92 E6433 Features
the DC current gain for this device is 25 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 50MHz
SMBTA 92 E6433 Applications
There are a lot of Infineon Technologies SMBTA 92 E6433 applications of single BJT transistors.