BCW66GLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCW66GLT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1996
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
800mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCW66
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Turn Off Time-Max (toff)
400ns
Height
940μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.21000
$0.21
500
$0.2079
$103.95
1000
$0.2058
$205.8
1500
$0.2037
$305.55
2000
$0.2016
$403.2
2500
$0.1995
$498.75
BCW66GLT1G Product Details
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 800mA.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 45V volts can be used.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V a collector emitter saturation voltage of 700mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 800mA a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor BCW66GLT1G applications of single BJT transistors.