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BCX5310H6327XTSA1

BCX5310H6327XTSA1

BCX5310H6327XTSA1

Infineon Technologies

BCX5310H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX5310H6327XTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Terminal Position SINGLE
Terminal FormFLAT
Frequency 125MHz
Number of Elements 1
Configuration SINGLE
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 125MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:67511 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.053649$1.053649
10$0.994008$9.94008
100$0.937743$93.7743
500$0.884664$442.332
1000$0.834589$834.589

BCX5310H6327XTSA1 Product Details

BCX5310H6327XTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 125MHz.This device can take an input voltage of 80V volts before it breaks down.The maximum collector current is 1A volts.

BCX5310H6327XTSA1 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz

BCX5310H6327XTSA1 Applications


There are a lot of Infineon Technologies BCX5310H6327XTSA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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