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DSS4160U-7

DSS4160U-7

DSS4160U-7

Diodes Incorporated

DSS4160U-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS4160U-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS4160
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 400mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 280mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Height 1mm
Length 2.15mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.059731 $0.059731
500 $0.043920 $21.96
1000 $0.036600 $36.6
2000 $0.033578 $67.156
5000 $0.031381 $156.905
10000 $0.029192 $291.92
15000 $0.028232 $423.48
50000 $0.027760 $1388
DSS4160U-7 Product Details

DSS4160U-7 Overview


In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 280mV allows maximum design flexibility.When VCE saturation is 280mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 1A volts.

DSS4160U-7 Features


the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS4160U-7 Applications


There are a lot of Diodes Incorporated DSS4160U-7 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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