DSS4160U-7 Overview

In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 280mV allows maximum design flexibility.When VCE saturation is 280mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 1A volts.

DSS4160U-7 Features

the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS4160U-7 Applications

There are a lot of Diodes Incorporated DSS4160U-7 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter