PBSS4032ND,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4032ND,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2009
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
Tin (Sn)
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
135MHz
Base Part Number
PBSS4032N
Pin Count
6
Number of Elements
1
Polarity
NPN, PNP
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
135MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
135MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.007933
$2.007933
10
$1.894277
$18.94277
100
$1.787053
$178.7053
500
$1.685899
$842.9495
1000
$1.590471
$1590.471
PBSS4032ND,115 Product Details
PBSS4032ND,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 400mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 135MHz.A breakdown input voltage of 30V volts can be used.Collector current can be as low as 3.5A volts at its maximum.
PBSS4032ND,115 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 300mV @ 400mA, 4A the emitter base voltage is kept at 5V a transition frequency of 135MHz
PBSS4032ND,115 Applications
There are a lot of Nexperia USA Inc. PBSS4032ND,115 applications of single BJT transistors.