2PB710ARL,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PB710ARL,235 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PB710A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-600mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
2PB710ARL,235 Product Details
2PB710ARL,235 Overview
This device has a DC current gain of 120 @ 150mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.120MHz is present in the transition frequency.Collector current can be as low as 500mA volts at its maximum.
2PB710ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at 5V a transition frequency of 120MHz
2PB710ARL,235 Applications
There are a lot of Nexperia USA Inc. 2PB710ARL,235 applications of single BJT transistors.