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2PB710ARL,235

  • 2PB710ARL,235
  • 2PB710ARL,235

2PB710ARL,235

2PB710ARL,235

Nexperia USA Inc.

2PB710ARL,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB710ARL,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 120MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PB710A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -600mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.04000 $0.04
500 $0.0396 $19.8
1000 $0.0392 $39.2
1500 $0.0388 $58.2
2000 $0.0384 $76.8
2500 $0.038 $95
2PB710ARL,235 Product Details

2PB710ARL,235 Overview


This device has a DC current gain of 120 @ 150mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.120MHz is present in the transition frequency.Collector current can be as low as 500mA volts at its maximum.

2PB710ARL,235 Features


the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz

2PB710ARL,235 Applications


There are a lot of Nexperia USA Inc. 2PB710ARL,235 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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