FZT869TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT869TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2000
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
25V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
6.5A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT869
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 150mA, 6.5A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.922133
$0.922133
10
$0.869937
$8.69937
100
$0.820695
$82.0695
500
$0.774240
$387.12
1000
$0.730416
$730.416
FZT869TA Product Details
FZT869TA Overview
This device has a DC current gain of 300 @ 1A 1V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 150mA, 6.5A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 6.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Input voltage breakdown is available at 25V volts.When collector current reaches its maximum, it can reach 7A volts.
FZT869TA Features
the DC current gain for this device is 300 @ 1A 1V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 350mV @ 150mA, 6.5A the emitter base voltage is kept at 6V the current rating of this device is 6.5A a transition frequency of 100MHz
FZT869TA Applications
There are a lot of Diodes Incorporated FZT869TA applications of single BJT transistors.