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FZT869TA

FZT869TA

FZT869TA

Diodes Incorporated

FZT869TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT869TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2000
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 25V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 6.5A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT869
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 150mA, 6.5A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Height 1.65mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.922133 $0.922133
10 $0.869937 $8.69937
100 $0.820695 $82.0695
500 $0.774240 $387.12
1000 $0.730416 $730.416
FZT869TA Product Details

FZT869TA Overview


This device has a DC current gain of 300 @ 1A 1V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 150mA, 6.5A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 6.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Input voltage breakdown is available at 25V volts.When collector current reaches its maximum, it can reach 7A volts.

FZT869TA Features


the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 350mV @ 150mA, 6.5A
the emitter base voltage is kept at 6V
the current rating of this device is 6.5A
a transition frequency of 100MHz

FZT869TA Applications


There are a lot of Diodes Incorporated FZT869TA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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