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ZXTP2009ZTA

ZXTP2009ZTA

ZXTP2009ZTA

Diodes Incorporated

ZXTP2009ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP2009ZTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -40V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -5.5A
Frequency 152MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP2009
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Power - Max 2.1W
Transistor Application SWITCHING
Gain Bandwidth Product 152MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 185mV @ 550mA, 5.5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 152MHz
Collector Emitter Saturation Voltage -185mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7.5V
hFE Min 100
Continuous Collector Current -5.5A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.691200 $0.6912
10 $0.652075 $6.52075
100 $0.615166 $61.5166
500 $0.580345 $290.1725
1000 $0.547495 $547.495
ZXTP2009ZTA Product Details

ZXTP2009ZTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.With a collector emitter saturation voltage of -185mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages should be kept at -5.5A to achieve high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5.5A.152MHz is present in the transition frequency.Breakdown input voltage is 40V volts.A maximum collector current of 5.5A volts can be achieved.

ZXTP2009ZTA Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 185mV @ 550mA, 5.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -5.5A
a transition frequency of 152MHz

ZXTP2009ZTA Applications


There are a lot of Diodes Incorporated ZXTP2009ZTA applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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