DSS4160V-7 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 100mA, 1A.Continuous collector voltage should be kept at 1A for high efficiency.The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.Maximum collector currents can be below 1A volts.

DSS4160V-7 Features

the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS4160V-7 Applications

There are a lot of Diodes Incorporated DSS4160V-7 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface