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NJVMJD44E3T4G

  • NJVMJD44E3T4G
  • NJVMJD44E3T4G

NJVMJD44E3T4G

NJVMJD44E3T4G

ON Semiconductor

NJVMJD44E3T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD44E3T4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.75W
Pin Count 3
Polarity NPN
Element Configuration Single
Power - Max 1.75W
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 10A
Collector Emitter Breakdown Voltage 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.37000 $0.74
NJVMJD44E3T4G Product Details

NJVMJD44E3T4G Overview


DC current gain in this device equals 1000 @ 5A 5V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 20mA, 10A.The maximum collector current is 10A volts.

NJVMJD44E3T4G Features


the DC current gain for this device is 1000 @ 5A 5V
the vce saturation(Max) is 2V @ 20mA, 10A

NJVMJD44E3T4G Applications


There are a lot of ON Semiconductor NJVMJD44E3T4G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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