BCP51H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCP51H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
25 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
2W
Current Rating
1.5A
Base Part Number
BCP51
Configuration
Single
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Frequency - Transition
125MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.11000
$0.11
500
$0.1089
$54.45
1000
$0.1078
$107.8
1500
$0.1067
$160.05
2000
$0.1056
$211.2
2500
$0.1045
$261.25
BCP51H6327XTSA1 Product Details
BCP51H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.During maximum operation, collector current can be as low as 1A volts.
BCP51H6327XTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the current rating of this device is 1.5A
BCP51H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP51H6327XTSA1 applications of single BJT transistors.