DSS5160T-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.The collector emitter saturation voltage is -340mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 100mA, 1A.With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Maximum collector currents can be below 1A volts.
DSS5160T-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
DSS5160T-7 Applications
There are a lot of Diodes Incorporated DSS5160T-7 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
