NJVMJD112T4G Overview
DC current gain in this device equals 1000 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In this part, there is a transition frequency of 25MHz.During maximum operation, collector current can be as low as 2A volts.
NJVMJD112T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
NJVMJD112T4G Applications
There are a lot of ON Semiconductor NJVMJD112T4G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
