BUL642D2G Overview

In this device, the DC current gain is 16 @ 500mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 200mA, 2A.An emitter's base voltage can be kept at 11V to gain high efficiency.The part has a transition frequency of 13MHz.The maximum collector current is 3A volts.

BUL642D2G Features

the DC current gain for this device is 16 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at 11V
a transition frequency of 13MHz

BUL642D2G Applications

There are a lot of ON Semiconductor BUL642D2G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver