MJD3055T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 8V @ 3.3A, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.There is a transition frequency of 2MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.Maximum collector currents can be below 10A volts.
MJD3055T4G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJD3055T4G Applications
There are a lot of ON Semiconductor MJD3055T4G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
