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DZTA42-13

DZTA42-13

DZTA42-13

Diodes Incorporated

DZTA42-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DZTA42-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DZTA42
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 25
Continuous Collector Current 500mA
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.932793 $0.932793
10 $0.879994 $8.79994
100 $0.830183 $83.0183
500 $0.783191 $391.5955
1000 $0.738859 $738.859
DZTA42-13 Product Details

DZTA42-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.50MHz is present in the transition frequency.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

DZTA42-13 Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz

DZTA42-13 Applications


There are a lot of Diodes Incorporated DZTA42-13 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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