DSS5160TQ-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS5160TQ-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
725mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
340mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
150MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.237910
$1.23791
10
$1.167840
$11.6784
100
$1.101736
$110.1736
500
$1.039373
$519.6865
1000
$0.980541
$980.541
DSS5160TQ-7 Product Details
DSS5160TQ-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 100mA, 1A.The part has a transition frequency of 150MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
DSS5160TQ-7 Features
the DC current gain for this device is 200 @ 1mA 5V the vce saturation(Max) is 340mV @ 100mA, 1A a transition frequency of 150MHz
DSS5160TQ-7 Applications
There are a lot of Diodes Incorporated DSS5160TQ-7 applications of single BJT transistors.