2SC5706-E Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.A VCE saturation (Max) of 240mV @ 100mA, 2A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 400MHz.The maximum collector current is 5A volts.
2SC5706-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-E Applications
There are a lot of ON Semiconductor 2SC5706-E applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
