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DXT2011P5Q-13

DXT2011P5Q-13

DXT2011P5Q-13

Diodes Incorporated

DXT2011P5Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT2011P5Q-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 3.2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 6A
Transition Frequency 130MHz
Frequency - Transition 130MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.32253 $1.61265
10,000 $0.31904 $3.1904
DXT2011P5Q-13 Product Details

DXT2011P5Q-13 Overview


This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In the part, the transition frequency is 130MHz.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.

DXT2011P5Q-13 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 220mV @ 500mA, 5A
a transition frequency of 130MHz

DXT2011P5Q-13 Applications


There are a lot of Diodes Incorporated DXT2011P5Q-13 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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