DXT2011P5Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT2011P5Q-13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
3.2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
6A
Transition Frequency
130MHz
Frequency - Transition
130MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DXT2011P5Q-13 Product Details
DXT2011P5Q-13 Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In the part, the transition frequency is 130MHz.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
DXT2011P5Q-13 Features
the DC current gain for this device is 100 @ 2A 2V the vce saturation(Max) is 220mV @ 500mA, 5A a transition frequency of 130MHz
DXT2011P5Q-13 Applications
There are a lot of Diodes Incorporated DXT2011P5Q-13 applications of single BJT transistors.