PBSS4350X,115 Overview

In this device, the DC current gain is 300 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 370mV @ 300mA, 3A.Parts of this part have transition frequencies of 100MHz.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.

PBSS4350X,115 Features

the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
a transition frequency of 100MHz

PBSS4350X,115 Applications

There are a lot of Nexperia USA Inc. PBSS4350X,115 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter