PBHV2160ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV2160ZX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Max Power Dissipation
650mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Reference Standard
IEC-60134
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
650mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
125mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
125mV @ 6mA, 30mA
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.22328
$0.22328
2,000
$0.20610
$0.4122
5,000
$0.19465
$0.97325
10,000
$0.18893
$1.8893
PBHV2160ZX Product Details
PBHV2160ZX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 10mA 10V.A VCE saturation (Max) of 125mV @ 6mA, 30mA means Ic has reached its maximum value(saturated).The breakdown input voltage is 600V volts.In extreme cases, the collector current can be as low as 100mA volts.
PBHV2160ZX Features
the DC current gain for this device is 70 @ 10mA 10V the vce saturation(Max) is 125mV @ 6mA, 30mA
PBHV2160ZX Applications
There are a lot of Nexperia USA Inc. PBHV2160ZX applications of single BJT transistors.