BCW66KGE6327HTSA1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 170MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Collector current can be as low as 800mA volts at its maximum.

BCW66KGE6327HTSA1 Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BCW66KGE6327HTSA1 Applications

There are a lot of Infineon Technologies BCW66KGE6327HTSA1 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting