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BCW66KGE6327HTSA1

BCW66KGE6327HTSA1

BCW66KGE6327HTSA1

Infineon Technologies

BCW66KGE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCW66KGE6327HTSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 170MHz
Base Part Number BCW66
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Gain Bandwidth Product 170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage 450mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 5V
Height 900μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.727330 $0.72733
10 $0.686160 $6.8616
100 $0.647321 $64.7321
500 $0.610680 $305.34
1000 $0.576113 $576.113
BCW66KGE6327HTSA1 Product Details

BCW66KGE6327HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 170MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Collector current can be as low as 800mA volts at its maximum.

BCW66KGE6327HTSA1 Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz

BCW66KGE6327HTSA1 Applications


There are a lot of Infineon Technologies BCW66KGE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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