DZT851-13 Overview

DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 375mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 375mV @ 300mA, 6A.A 6A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 130MHz.The breakdown input voltage is 60V volts.A maximum collector current of 6A volts can be achieved.

DZT851-13 Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 375mV
the vce saturation(Max) is 375mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

DZT851-13 Applications

There are a lot of Diodes Incorporated DZT851-13 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface