FCX688BTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 100mA 2V.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

FCX688BTA Features

the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

FCX688BTA Applications

There are a lot of Diodes Incorporated FCX688BTA applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver