FMMT451TA Overview
In this device, the DC current gain is 50 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 15mA, 150mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 150MHz.Breakdown input voltage is 60V volts.Maximum collector currents can be below 1A volts.
FMMT451TA Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT451TA Applications
There are a lot of Diodes Incorporated FMMT451TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting