FMMT451TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT451TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Voltage - Rated DC
60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT451
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
350mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.250727
$0.250727
10
$0.236535
$2.36535
100
$0.223146
$22.3146
500
$0.210515
$105.2575
1000
$0.198599
$198.599
FMMT451TA Product Details
FMMT451TA Overview
In this device, the DC current gain is 50 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 15mA, 150mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 150MHz.Breakdown input voltage is 60V volts.Maximum collector currents can be below 1A volts.
FMMT451TA Features
the DC current gain for this device is 50 @ 150mA 10V a collector emitter saturation voltage of 350mV the vce saturation(Max) is 350mV @ 15mA, 150mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
FMMT451TA Applications
There are a lot of Diodes Incorporated FMMT451TA applications of single BJT transistors.