2SD1803T-TL-H Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 150mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A maximum collector current of 5A volts can be achieved.
2SD1803T-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803T-TL-H Applications
There are a lot of ON Semiconductor 2SD1803T-TL-H applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
