NSS1C201LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.When VCE saturation is 150mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 3A volts.
NSS1C201LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 110MHz
NSS1C201LT1G Applications
There are a lot of ON Semiconductor NSS1C201LT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
