FMMT625TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT625TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
150V
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
135MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT625
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
135MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 200mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
135MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.20669
$0.62007
6,000
$0.19336
$1.16016
15,000
$0.18002
$2.7003
30,000
$0.17780
$5.334
FMMT625TA Product Details
FMMT625TA Overview
This device has a DC current gain of 300 @ 200mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 180mV.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 135MHz.Input voltage breakdown is available at 150V volts.Collector current can be as low as 1A volts at its maximum.
FMMT625TA Features
the DC current gain for this device is 300 @ 200mA 10V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 300mV @ 50mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 135MHz
FMMT625TA Applications
There are a lot of Diodes Incorporated FMMT625TA applications of single BJT transistors.