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FMMT625TA

FMMT625TA

FMMT625TA

Diodes Incorporated

FMMT625TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT625TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 150V
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 135MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT625
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 135MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 135MHz
Collector Emitter Saturation Voltage 180mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.20669 $0.62007
6,000 $0.19336 $1.16016
15,000 $0.18002 $2.7003
30,000 $0.17780 $5.334
FMMT625TA Product Details

FMMT625TA Overview


This device has a DC current gain of 300 @ 200mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 180mV.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 135MHz.Input voltage breakdown is available at 150V volts.Collector current can be as low as 1A volts at its maximum.

FMMT625TA Features


the DC current gain for this device is 300 @ 200mA 10V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 135MHz

FMMT625TA Applications


There are a lot of Diodes Incorporated FMMT625TA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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