MJD210T4G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 8V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -5A.In the part, the transition frequency is 65MHz.Single BJT transistor can be broken down at a voltage of 25V volts.A maximum collector current of 5A volts can be achieved.

MJD210T4G Features

the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz

MJD210T4G Applications

There are a lot of ON Semiconductor MJD210T4G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter