PXT4403,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PXT4403,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.1W
Terminal Form
FLAT
Frequency
200MHz
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
200MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
350ns
Collector-Base Capacitance-Max
8.5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.15012
$0.15012
PXT4403,115 Product Details
PXT4403,115 Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.200MHz is present in the transition frequency.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
PXT4403,115 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
PXT4403,115 Applications
There are a lot of Nexperia USA Inc. PXT4403,115 applications of single BJT transistors.