2N4403TFR Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As you can see, the part has a transition frequency of 200MHz.Breakdown input voltage is 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

2N4403TFR Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403TFR Applications

There are a lot of ON Semiconductor 2N4403TFR applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter