MPSW3725

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Manufacturer part number:MPSW3725

Manufacturer:ON Semiconductor

Description:MPSW3725 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MPSW3725 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Power - Max	1W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	950mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	1.2A
Frequency - Transition	250MHz

Quantity	Unit Price	Ext. Price
1	$0.609288	$0.609288
10	$0.574800	$5.748
100	$0.542264	$54.2264
500	$0.511570	$255.785
1000	$0.482613	$482.613

MPSW3725 Overview

In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.