FMMT634TA Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 850mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 960mV @ 5mA, 1A.A 900mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.This device has a current rating of 900mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 900mA volts at Single BJT transistors maximum.
FMMT634TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 960mV @ 5mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 900mA
FMMT634TA Applications
There are a lot of Diodes Incorporated FMMT634TA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
