BD442STU Overview

In this device, the DC current gain is 40 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -800mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.A transition frequency of 3MHz is present in the part.When collector current reaches its maximum, it can reach 4A volts.

BD442STU Features

the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD442STU Applications

There are a lot of ON Semiconductor BD442STU applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver