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KSA916YTA

KSA916YTA

KSA916YTA

ON Semiconductor

KSA916YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA916YTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -120V
Max Power Dissipation 900mW
Terminal Position BOTTOM
Current Rating -800mA
Frequency 120MHz
Base Part Number KSA916
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -1V
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Height 8mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.386603 $0.386603
10 $0.364720 $3.6472
100 $0.344075 $34.4075
500 $0.324600 $162.3
1000 $0.306226 $306.226
KSA916YTA Product Details

KSA916YTA Overview


In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.As you can see, the part has a transition frequency of 120MHz.An input voltage of 120V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

KSA916YTA Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 120MHz

KSA916YTA Applications


There are a lot of ON Semiconductor KSA916YTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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