FZT591ATA Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 150MHz.An input voltage of 40V volts is the breakdown voltage.There is a 140V maximal voltage in the device due to collector-emitter breakdown.In extreme cases, the collector current can be as low as 1A volts.
FZT591ATA Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 150MHz
FZT591ATA Applications
There are a lot of Diodes Incorporated FZT591ATA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
