2N4403TF Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.As you can see, the part has a transition frequency of 200MHz.An input voltage of 40V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 600mA volts.
2N4403TF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TF Applications
There are a lot of ON Semiconductor 2N4403TF applications of single BJT transistors.
- Inverter
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- Driver
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- Muting
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- Interface
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