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NSVMMBT5087LT3G

NSVMMBT5087LT3G

NSVMMBT5087LT3G

ON Semiconductor

NSVMMBT5087LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT5087LT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage50V
Frequency - Transition 40MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:115550 items

Pricing & Ordering

QuantityUnit PriceExt. Price

NSVMMBT5087LT3G Product Details

NSVMMBT5087LT3G Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.In extreme cases, the collector current can be as low as 50mA volts.

NSVMMBT5087LT3G Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA

NSVMMBT5087LT3G Applications


There are a lot of ON Semiconductor NSVMMBT5087LT3G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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