NSVMMBT5087LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVMMBT5087LT3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
225mW
Power - Max
225mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.05544
$0.5544
NSVMMBT5087LT3G Product Details
NSVMMBT5087LT3G Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.In extreme cases, the collector current can be as low as 50mA volts.
NSVMMBT5087LT3G Features
the DC current gain for this device is 250 @ 100μA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA
NSVMMBT5087LT3G Applications
There are a lot of ON Semiconductor NSVMMBT5087LT3G applications of single BJT transistors.