FJI5603DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJI5603DTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Weight
2.084g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
100W
Frequency
5MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Transistor Application
SWITCHING
Gain Bandwidth Product
5MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 400mA 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 200mA, 1A
Collector Emitter Breakdown Voltage
800V
Transition Frequency
5MHz
Collector Base Voltage (VCBO)
1.6kV
Emitter Base Voltage (VEBO)
12V
hFE Min
20
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.505408
$0.505408
10
$0.476800
$4.768
100
$0.449811
$44.9811
500
$0.424350
$212.175
1000
$0.400330
$400.33
FJI5603DTU Product Details
FJI5603DTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 400mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 200mA, 1A.Keeping the emitter base voltage at 12V can result in a high level of efficiency.As you can see, the part has a transition frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FJI5603DTU Features
the DC current gain for this device is 20 @ 400mA 3V the vce saturation(Max) is 2.5V @ 200mA, 1A the emitter base voltage is kept at 12V a transition frequency of 5MHz
FJI5603DTU Applications
There are a lot of ON Semiconductor FJI5603DTU applications of single BJT transistors.