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FJI5603DTU

FJI5603DTU

FJI5603DTU

ON Semiconductor

FJI5603DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJI5603DTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 100W
Frequency 5MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Transistor Application SWITCHING
Gain Bandwidth Product 5MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 400mA 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 200mA, 1A
Collector Emitter Breakdown Voltage 800V
Transition Frequency 5MHz
Collector Base Voltage (VCBO) 1.6kV
Emitter Base Voltage (VEBO) 12V
hFE Min 20
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.505408 $0.505408
10 $0.476800 $4.768
100 $0.449811 $44.9811
500 $0.424350 $212.175
1000 $0.400330 $400.33
FJI5603DTU Product Details

FJI5603DTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 400mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 200mA, 1A.Keeping the emitter base voltage at 12V can result in a high level of efficiency.As you can see, the part has a transition frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

FJI5603DTU Features


the DC current gain for this device is 20 @ 400mA 3V
the vce saturation(Max) is 2.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 5MHz

FJI5603DTU Applications


There are a lot of ON Semiconductor FJI5603DTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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