FZT649TC Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).The part has a transition frequency of 240MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

FZT649TC Features

the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 240MHz

FZT649TC Applications

There are a lot of Diodes Incorporated FZT649TC applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver