FZT705TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT705TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2000
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Voltage - Rated DC
-120V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT705
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Polarity
PNP
Voltage
100V
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
3000 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 2mA, 2A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
120V
Frequency - Transition
160MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
10V
hFE Min
3000
Continuous Collector Current
-2A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.88000
$0.88
500
$0.8712
$435.6
1000
$0.8624
$862.4
1500
$0.8536
$1280.4
2000
$0.8448
$1689.6
2500
$0.836
$2090
FZT705TA Product Details
FZT705TA Overview
This device has a DC current gain of 3000 @ 1A 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.The base voltage of the emitter can be kept at 10V to achieve high efficiency.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 160MHz.Breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
FZT705TA Features
the DC current gain for this device is 3000 @ 1A 5V a collector emitter saturation voltage of 1.3V the vce saturation(Max) is 2.5V @ 2mA, 2A the emitter base voltage is kept at 10V the current rating of this device is -2A a transition frequency of 160MHz
FZT705TA Applications
There are a lot of Diodes Incorporated FZT705TA applications of single BJT transistors.