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FZT705TA

FZT705TA

FZT705TA

Diodes Incorporated

FZT705TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT705TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2000
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC -120V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT705
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity PNP
Voltage 100V
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2mA, 2A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 160MHz
Collector Emitter Saturation Voltage 1.3V
Max Breakdown Voltage 120V
Frequency - Transition 160MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 10V
hFE Min 3000
Continuous Collector Current -2A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.88000 $0.88
500 $0.8712 $435.6
1000 $0.8624 $862.4
1500 $0.8536 $1280.4
2000 $0.8448 $1689.6
2500 $0.836 $2090
FZT705TA Product Details

FZT705TA Overview


This device has a DC current gain of 3000 @ 1A 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.The base voltage of the emitter can be kept at 10V to achieve high efficiency.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 160MHz.Breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

FZT705TA Features


the DC current gain for this device is 3000 @ 1A 5V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 2.5V @ 2mA, 2A
the emitter base voltage is kept at 10V
the current rating of this device is -2A
a transition frequency of 160MHz

FZT705TA Applications


There are a lot of Diodes Incorporated FZT705TA applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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